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APTGT100H120
Full - Bridge Fast Trench + Field Stop IGBT(R) Power Module VCES = 1200V IC = 100A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile
VBUS Q1 G1 Q3 G3
E1
OUT1 OUT2
E3
Q2 G2
Q4 G4
E2
E4
0/VBUS
OUT1 G1 E1 VBUS 0/VBUS G2 E2
E3 G3 OUT2
E4 G4
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
Reverse Bias Safe Operating Area
200A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-5
APTGT100H120 - Rev 0
May, 2005
Max ratings 1200 140 100 200 20 480
Unit V A V W
APTGT100H120
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 100A Tj = 125C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 5.8 Max 250 2.1 6.5 400 Unit A V V nA
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 100A R G = 3.9 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 100A R G = 3.9
Min
Typ 7200 400 300 260 30 420 70 290 50 520 90 10 10
Max
Unit pF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(A V) VF trr Qrr Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions VR=1200V
50% duty cycle
Min 1200 Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Typ
Max 250 500
Unit V A A
IF = 100A VGE = 0V IF = 100A VR = 600V
di/dt =2000A/s
100 1.6 1.6 170 280 9 18
2.1
V ns C
APT website - http://www.advancedpower.com
2-5
APTGT100H120 - Rev 0
May, 2005
APTGT100H120
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.26 0.48 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Package outline (dimensions in mm)
APT website - http://www.advancedpower.com
3-5
APTGT100H120 - Rev 0
May, 2005
APTGT100H120
Typical Performance Curve
200 Output Characteristics (VGE=15V) Output Characteristics 200 T J = 125C
TJ=125C
150 IC (A)
TJ=25C
150 IC (A)
VGE =17V
VGE=13V VGE =15V
100
100
VGE=9V
50
50
0 0 1 2 VCE (V) 3 4
0 0 1 2 VCE (V) 3 4
200 175 150
Transfert Characteristics
T J=25C TJ=125C
25 20 E (mJ) 15 10 5 0
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 3.9 TJ = 125C Eon Eoff Er Eon
125 IC (A) 100 75 50 25 0 5 6 7 8 9
TJ =125C
10
11
12
0
25
50
75
100 125 150 175 200 IC (A)
VGE (V) Switching Energy Losses vs Gate Resistance 25 20 E (mJ) 15 10 5 0 0 5 10 15 20 Gate Resistance (ohms) 25
VCE = 600V V GE =15V IC = 100A T J = 125C
Eon
Reverse Bias Safe Operating Area 240 200 160
Eoff Er
IC (A)
120 80 40 0 0 300 600 900 VCE (V) 1200 1500
VGE=15V T J=125C RG=3.9
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.3 Thermal Impedance (C/W) 0.25 0.2 0.15 0.1 0.05 0.9 0.7
IGBT
0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds)
APT website - http://www.advancedpower.com
4-5
APTGT100H120 - Rev 0
May, 2005
0.5
APTGT100H120
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 60 50
ZCS VCE =600V D=50% RG=3.9 TJ =125C Tc=75C
Forward Characteristic of diode 200
TJ =25C
40 30 20 10 0 0 20
Hard switching
ZVS
150 IC (A)
100
TJ =125C
50
T J=125C TJ =25C
0 40 60 80 IC (A) 100 120 140 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.5 Thermal Impedance (C/W) 0.9 0.4 0.3 0.2 0.1
Diode
0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds)
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGT100H120 - Rev 0
APT reserves the right to change, without notice, the specifications and information contained herein
May, 2005

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